M. G. Dadamirzaev, “Heating of charge carriers and rectification of current in asymmetrical $p$–$n$ junction in a microwave field”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 3,Pages 299

This article is cited in 2 papers

Electronic properties of semiconductors

Heating of charge carriers and rectification of current in asymmetrical $p$–$n$ junction in a microwave field

M. G. Dadamirzaev^ab

^a Namangan Engineering Pedagogical Institute
^b Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: The emf $U_{\mathrm{oc}}$ of hot charge carriers generated in an asymmetrical $p$–$n$ junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through $p$–$n$ junction.

Received: 20.07.2010
Accepted: 20.07.2010