This article is cited in 1 paper

Electronic properties of semiconductors

The I–V characteristics of asymmetrically necked samples of high-resistivity silicon

S. Ashmontas^a, V. V. Kleiza<sup>b

a</sup> Semiconductor Physics Institute of Center for Physical Sciences and Technologies, Vilnius, 01108, Lithuania
^b Panevezhys Institute of Kaunas Technological University, Panevezhys, 35209, Lithuania

Abstract: The results of investigation of the I–V characteristics are presented for asymmetrically necked n-Si samples. It is established that the asymmetry of the I–V characteristic for the samples under investigation at the room and liquid-nitrogen temperatures in high electric fields is caused by the space-charge formation. At $T$ = 78 K in the warm-electron region, the asymmetry of the I–V characteristic is caused by nonlocal relation between the electron mobility and the nonuniform electric-field intensity. It is found that the sample resistance at liquid-nitrogen temperature insignificantly increases after applying high electric-field pulses. The effect under observation is attributed to a decrease in the electron concentration in the necked section of the sample due to the redistribution of hot electrons between bulk and surface.

Received: 05.08.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 284–287

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