A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, V. S. Sizov, S. O. Usov, Yu. G. Musikhin, D. Gerthsen, “Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 2,Pages <nobr>274

This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

A. F. Tsatsul'nikov^ab, V. V. Lundin^ab, E. E. Zavarin^ab, A. E. Nikolaev^ab, A. V. Sakharov^ab, V. S. Sizov^ab, S. O. Usov^ab, Yu. G. Musikhin, D. Gerthsen^c

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Laboratorium für Electronenmikroskopie, Universität (TH) Karlsruhe, D-76128 Karlsruhe, Deutschland

Abstract: Results of studies of hydrogen addition during the growth of thin ($\sim$2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms.

Received: 05.08.2010
Accepted: 16.08.2010