This article is cited in 16 papers

Manufacturing, processing, testing of materials and structures

Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation

V. A. Volodin^ab, A. S. Kacko<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: To crystallize hydrogenated amorphous silicon films on glass substrates, pulsed Ti-sapphire laser radiation is used, with a pulse duration less than 30 fs. The initial films are grown by plasma-enhanced chemical-vapor deposition at the temperatures 200 and 250$^\circ$C. The structural properties of the initial films and films treated with laser radiation pulses are studied by Raman spectroscopy. The conditions for complete crystallization of the films grown on glass substrates to thicknesses of up to 100 nm and hydrogen content of up to 20 at% are established. The conditions provide the fabrication of highly homogeneous films by scanning laser treatments. It is found that, if the hydrogen content in the film is 30–40 at%, the crystallization is an inhomogeneous process and laser ablation is observed in some areas of the films.

Received: 14.07.2010
Accepted: 14.07.2010

 English version: Semiconductors, 2011, 45:2, 265–270

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