This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Electron probe microanalysis of heterostructures with nanolayers

T. B. Popova, Л. А. Bakaleynikov, E. Yu. Flegontova, A. A. Shakhmin, M. V. Zamoryanskaya

Ioffe Institute, St. Petersburg

Abstract: A technique of the electron probe microanalysis of semiconductor heterostructures consisting of nanolayers is described. Features of the microanalysis of such structures are compared to the analysis of structures with thicker layers and of homogeneous samples. Possibilities of the method are illustrated by an example of determination of the layer composition in light-emitting diodes and laser quantum-well InGaAs and ZnCdSe heterostructures. The proposed technique allowed determination of the composition and depth of quantum-well nanosize layers in the samples under study with an accuracy of no worse than 10%. The results of the microanalysis are shown to be in good agreement with the data obtained by other methods.

Received: 15.06.2010
Accepted: 22.06.2010

 English version: Semiconductors, 2011, 45:2, 260–264

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