A. E. Belyaev, V. V. Basanets, N. S. Boltovets, A. V. Zorenko, L. M. Kapitanchuk, V. P. Klad'ko, R. V. Konakova, N. V. Kolesnik, T. V. Korostinskaya, T. V. Kritskaya, Ya. Ya. Kudryk, A. V. Kuchuk, V. V. Milenin, A. B. Ataubaeva, “Effect of $p$–$n$ junction overheating on degradation of silicon high-power pulsed IMPATT diodes”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 2,Pages 256

This article is cited in 11 papers

Semiconductor physics

Effect of $p$–$n$ junction overheating on degradation of silicon high-power pulsed IMPATT diodes

A. E. Belyaev^a, V. V. Basanets^b, N. S. Boltovets^b, A. V. Zorenko^b, L. M. Kapitanchuk^c, V. P. Klad'ko^a, R. V. Konakova^a, N. V. Kolesnik^b, T. V. Korostinskaya^b, T. V. Kritskaya^b, Ya. Ya. Kudryk^a, A. V. Kuchuk^a, V. V. Milenin^a, A. B. Ataubaeva^a

^a Institute of Semiconductor Physics NAS, Kiev
^b Orion State Research Institute, Kyiv
^c E. O. Paton Electric Welding Institute, National Academy of Sciences of Ukraine

Abstract: The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that $p$–$n$ junction overheat at an operating pulse length of 300 ns and a supply current amplitude of 11.3–15 A amounts to 270–430$^\circ$C relative to an ambient medium. The temperature limit of junction overheating, above which IMPATT diodes rapidly degrade, was determined as 350$^\circ$C. The presented results of X-ray phase analysis and depth profiles of Au–Pt–Ti–Pd–Si ohmic contact components confirm thermal limits of the IMPATT diode operating in the pulsed mode.

Received: 14.07.2010
Accepted: 14.07.2010