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6 papers
Semiconductor physics
Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
M. P. Mikhailova,
I. A. Andreev,
K. D. Moiseev,
È. V. Ivanov,
G. G. Konovalov,
M. Yu. Mikhailov,
Yu. P. Yakovlev Ioffe Institute, St. Petersburg
Abstract:
Photodetectors for the spectral range 2–4
$\mu$m, based on an asymmetric type-II heterostructure
$p$-InAs/AlSb/InAsSb/AlSb/
$(p, n)$GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have been grown by metal-organic vapor phase epitaxy and analyzed. The transport, luminescent, photoelectric, current-voltage, and capacitance-voltage characteristics of these structures have been examined. A high-intensity positive and negative luminescence was observed in the spectral range 3–4
$\mu$m at high temperatures (300–400 K). The photosensitivity spectra were in the range 1.2–3.6
$\mu$m (
$T$ = 77 K). Large values of the quantum yield (
$\eta$ = 0.6–0.7), responsivity (
$S_\lambda$ = 0.9–1.4 A W
$^{-1}$), and detectivity (
$D^*_\lambda$ = 3.5
$\times$ 10
$^{11}$ to 10
$^{10}$ cm Hz
$^{1/2}$ W
$^{-1}$) were obtained at
$T$ = 77–200 K. The small capacitance of the structures (
$C$ = 7.5 pF at
$V$ = -1 V and
$T$ = 300 K) enabled an estimate of the response time of the photodetector at
$\tau$ = 75 ps, which corresponds to a bandwidth of about 6 GHz. Photodetectors of this kind are promising for heterodyne detection of the emission of quantum-cascade lasers and IR spectroscopy.
Received: 05.08.2010
Accepted: 16.08.2010
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