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Fizika i Tekhnika Poluprovodnikov, 2011 Volume 45, Issue 2, Pages 245–250 (Mi phts8468)

This article is cited in 4 papers

Semiconductor physics

Spectral width of laser generation in quantum dot lasers: An analytical approach

A. V. Savel'evab, M. V. Maksimovac, A. E. Zhukovac

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg

Abstract: An analytical approach to description of broad spectra of lasing in quantum-dot lasers has been developed. It is shown that the spectral width of the laser generation is determined by three parameters: the spectral width of the gain spectrum, homogeneous broadening of the line, and the effective parameter of the gain saturation. As a result, the dependence of the spectral width of lasing on the laser output power is shown to be universal and can be described as a function of a single dimensionless parameter.

Received: 10.06.2010
Accepted: 22.06.2010


 English version:
Semiconductors, 2011, 45:2, 241–247

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