This article is cited in 8 papers

Amorphous, glassy, organic semiconductors

Quasi-equilibrium hopping drift and field-stimulated diffusion in ultrathin layers of organic materials

N. A. Korolev, V. R. Nikitenko, D. V. Ivanov

National Engineering Physics Institute "MEPhI", Moscow

Abstract: Hopping transport (drift and diffusion) of charge carriers is studied by numerical Monte Carlo simulation at the quasi-equilibrium initial energy distribution of charge carriers in ultrathin disordered organic semiconductor and insulator films (thinner than 100 molecular layers). The effect of variations in the film thickness, the degree of energy disorder, and the applied field strength on the drift mobility and diffusion coefficient is analyzed. It is found that, as the film thickness is increased, the mobility substantially decreases and follows the power law. The diffusion coefficient significantly differs from that obtained previously in the limit of large thicknesses. This result must be taken into consideration in the analysis of experimental data.

Received: 14.07.2010
Accepted: 26.07.2010

 English version: Semiconductors, 2011, 45:2, 230–235

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