This article is cited in 9 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

Z. F. Krasil'nik^a, K. E. Kudryavtsev^a, A. N. Kachemtsev, D. N. Lobanov^a, A. V. Novikov^a, S. V. Obolensky^b, D. V. Shengurov<sup>a

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevski State University of Nizhni Novgorod

Abstract: The effect of neutron radiation on the electroluminescence of the Si $p$–$i$–$n$ diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

Received: 05.08.2010
Accepted: 16.08.2010

 English version: Semiconductors, 2011, 45:2, 225–229

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