This article is cited in 8 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells

O. A. Soltanovich^a, N. M. Shmidt^b, E. B. Yakimov<sup>a

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS
^b Ioffe Institute, St. Petersburg

Abstract: A frequency dependence of capacitance-voltage (C–V) characteristics in multiple quantum well InGaN/GaN heterostructures in the range of 60 Hz-5 MHz is investigated at temperatures from 77 to 300 K. It is found that temperature lowering and test frequency increase lead to the similar changes in obtained apparent carrier distributions. It is shown that commonly used conditions for capacitance-voltage profiling of InGaN/GaN LEDs correspond to an intermediate case between low- and high-frequency capacitance approximations. At all temperatures investigated, the edge low-frequency capacitance-voltage profiles are experimentally reached and found to be identical. The process of attainment of equilibrium of the charges in the active region is most likely determined by tunneling of the carriers through the barriers.

Received: 24.06.2010
Accepted: 01.07.2010

 English version: Semiconductors, 2011, 45:2, 221–224

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