This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots

I. I. Reshina, S. V. Ivanov

Ioffe Institute, St. Petersburg

Abstract: Measurements of photoluminescence and resonance Raman scattering spectra of a CdMnSe/ZnSe structure with self-assembled quantum dots in magnetic fields up to 6 T in the Faraday and Voigt configurations show that the ratio of the valence- and conduction-band exchange integrals exceeds the known value for bulk CdMnSe by a factor of 1.5. This effect is attributed mainly to a decrease in the conduction-band exchange integral caused by a contribution from the kinetic $s$–$d$ exchange mechanism, forbidden in the bulk.

Received: 05.08.2010
Accepted: 16.08.2010

 English version: Semiconductors, 2011, 45:2, 215–220

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