This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells

A. A. Toropov, V. Kh. Kaibyshev, Ya. V. Terent'ev, S. V. Ivanov, P. S. Kop'ev

Ioffe Institute, St. Petersburg

Abstract: Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic $g$ factor of bound exciton complexes.

Received: 22.06.2010
Accepted: 29.06.2010

 English version: Semiconductors, 2011, 45:2, 208–214

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