M. V. Shaleev, A. V. Novikov, N. A. Baidakova, A. N. Yablonskii, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasil'nik, “Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 2,Pages <nobr>202

This article is cited in 10 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

M. V. Shaleev^a, A. V. Novikov^ab, N. A. Baidakova^ab, A. N. Yablonskii^a, O. A. Kuznetsov^c, D. N. Lobanov^a, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001) buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained with consideration of diffusive smearing of the strained Si layer lying above the islands.

Received: 08.06.2010
Accepted: 22.06.2010