This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Modulation waves of charge carriers in $n$- and $p$-type semiconductor layers

T. T. Мnatsakanov^a, M. E. Levinshteĭn^b, A. G. Tandoev^a, S. N. Yurkov<sup>a

a</sup> Russian Electrotechnical Institute Named after V. I. Lenin
^b Ioffe Institute, St. Petersburg

Abstract: The effect of the carrier mobility dependence on the electric field strength, $\mu(F)$, on the propagation of waves of injected carriers in $n$- and $p$-type layers in the quasi-neutral drift mode has been studied. It is shown that consideration of the dependence $\mu(F)$ differently affects the motion of minority carriers in $n$- and $p$-type layers. The motion of an electron wave in the $p$-type base of a $p^+$–$p$–$n^+$ structure is slowed down, and that of a hole wave in the $n$-base of a $p^+$–$p$–$n^+$ structure is speeded up. The results obtained supplement the previously suggested classical description of the propagation of a wave of minority carriers, which disregarded the effect of $\mu(F)$ dependences. The results of an analytical calculation are confirmed using a numerical experiment.

Received: 24.06.2010
Accepted: 25.06.2010

 English version: Semiconductors, 2011, 45:2, 192–197

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