This article is cited in 8 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Semiconductor surface potential relaxation in the MIS structure in the presence of convective currents in insulator and through its boundaries

S. G. Dmitriev

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: It is shown that the Berglund method for determining the metal-insulator-semiconductor surface potential relaxation as the structure voltage changes is valid only in the absence of convective currents in the insulator. A method for determining the potential relaxation in the presence of convective currents is suggested. The currents induced in the structure due to changes in the contact potential difference during temperature variations are also considered.

Received: 29.03.2010
Accepted: 24.06.2010

 English version: Semiconductors, 2011, 45:2, 188–191

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