This article is cited in 1 paper

Electronic properties of semiconductors

Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped $n$-Bi$_{0.88}$Sb$_{0.12}$ single crystals

B. A. Tairov^a, O. I. Ibragimova^a, A. G. Ragimov^a, R. Brazis<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Semiconductor Physics Institute, LT-01108, Vilnius, Lithuania

Abstract: The components of resistivity $(\rho_{ij})$, Hall coefficient $(R_{ijk})$, and magnetoresistance $(\rho_{ij,kl})$ of $n$-Bi$_{0.88}$Sb$_{0.12}$ single crystals doped with tellurium to 0.01, 0.1, and 0.2 at% have been measured in the temperature range of 77–300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as $m_2^*/m_1^*$ = 3 and $b\approx$ 0.16, respectively.

Received: 02.02.2010
Accepted: 02.07.2010

 English version: Semiconductors, 2011, 45:2, 148–152

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