This article is cited in 1 paper

Non-electronic properties of semiconductors (atomic structure, diffusion)

Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

A. M. Ivanov^a, V. V. Kozlovsky^b, N. B. Strokan^a, A. A. Lebedev<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Polytechnic University

Abstract: Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Received: 07.06.2010
Accepted: 22.06.2010

 English version: Semiconductors, 2011, 45:2, 141–144

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