This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov^ab, V. B. Shmagin^b, M. N. Drozdov^b, M. O. Marychev^c, K. E. Kudryavtsev^b, M. V. Kuznetsov^a, B. A. Andreev^b, A. V. Kornaukhov^a, Z. F. Krasil'nik<sup>b

a</sup> Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. $n$-Si:Er layers have been grown in the temperature range 400–800$^\circ$C and annealed in hydrogen atmosphere at a temperature of 800$^\circ$C for 30 min. The possible nature of the donor centers is discussed.

Received: 06.05.2010
Accepted: 18.05.2010

 English version: Semiconductors, 2011, 45:1, 130–133

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