This article is cited in 19 papers

Micro- and nanocrystalline, porous, composite semiconductors

Influence of dislocations on the process of pore formation in $n$-InP (111) single crystals

Ya. A. Suchikova^a, V. V. Kidalov^a, G. A. Sukach<sup>b

a</sup> Berdyansk State Pedagogical University
^b National University of Bioresources and Nature Management, ul. Geroev Oborony 15, Kyiv, 03041, Ukraine

Abstract: Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore formation in the $n$-InP samples are established. It is shown that they are caused by outcrop of dislocations on the (111) surface and pore growth both along the surface and perpendicularly to it. The dislocation density in the places of an increased impurity concentration is calculated.

Received: 22.04.2010
Accepted: 07.05.2010

 English version: Semiconductors, 2011, 45:1, 121–124

Bibliographic databases:

•