This article is cited in 19 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electron-electron interaction and spin-orbit coupling in InAs/AlSb heterostructures with a two-dimensional electron gas

V. I. Gavrilenko^a, S. S. Krishtopenko^a, M. Goiran<sup>b

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Laboratoire National des Champs Magnetiques Intenses, 31400 Toulouse, France

Abstract: The effect of electron-electron interaction on the spectrum of two-dimensional electron states in InAs/AlSb (001) heterostructures with a GaSb cap layer with one filled size-quantization subband. The energy spectrum of two-dimensional electrons is calculated in the Hartree and Hartree-Fock approximations. It is shown that the exchange interaction decreasing the electron energy in subbands increases the energy gap between subbands and the spin-orbit splitting of the spectrum in the entire region of electron concentrations, at which only the lower size-quantization band is filled. The nonlinear dependence of the Rashba splitting constant at the Fermi wave vector on the concentration of two-dimensional electrons is demonstrated.

Received: 27.04.2010
Accepted: 18.06.2010

 English version: Semiconductors, 2011, 45:1, 110–117

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