This article is cited in 21 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Type-I semiconductor heterostructures with an indirect-gap conduction band

T. S. Shamirzaev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: In spite of a great number of publications concerned with studies of semiconductor heterostructures, the type-I semiconductor heterostructures, in which the ground electron state belongs to the indirect-gap ($X$ and $L$) minimums of the conduction band, have remained poorly understood until recently. In this paper, the possibility is discussed of using III–V semiconductor compounds to create type-I semiconductor heterostructures with electron states belonging to the indirect-gap minimums of the conduction band.

Received: 20.05.2010
Accepted: 02.06.2010

 English version: Semiconductors, 2011, 45:1, 96–102

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