Semiconductor structures, low-dimensional systems, quantum phenomena

Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces

Ákos Nemcsics^a, Jenö Takács<sup>b

a</sup> Jointed MBE Research Laboratory of ÓE-MTI and MTA-MFA, H-1525, Budapest, Hungary
^b Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK

Abstract: This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron difraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation.

Received: 16.03.2010
Accepted: 28.05.2010

Language: English

 English version: Semiconductors, 2011, 45:1, 91–95

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