Surface, interfaces, thin films

On the maximum thickness of the space-charge region of reverse biased $p^+$–$n$ junctions with a positive bevel

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin

Abstract: Two-dimensional potential and electric-field strength distributions in edge regions of sharply asymmetric reverse biased $p^+$–$n$ junctions with a positive bevel were numerically simulated. It was shown that the maximum thickness of the space-charge region $W_{nM}$ nonmonotonically depends on the angle $\theta$ between the bevel surface and junction plane: the function $W_{nM}(\theta)$ reaches a maximum at $\theta$ decreasing from 60$^\circ$ to 35$^\circ$ as the parameter $Q_s/\varepsilon_s\varepsilon_0 E_{vM}$ increases from 0 to 0.02 (here $Q_s$ is the surface charge density, $\varepsilon_s\varepsilon_0$ is the absolute permittivity of the semiconductor, and $E_{vM}$ is the maximum field strength in the space-charge region of the $p^+$–$n$ junction far from the bevel). The results obtained may be useful in designing high-voltage thyristors based on Si, SiC, and other materials.

Received: 24.03.2010
Accepted: 18.06.2010

 English version: Semiconductors, 2011, 45:1, 66–68

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