This article is cited in 5 papers

Electronic properties of semiconductors

Current-voltage characteristics of ZnGa$_2$Se$_4$ compound polycrystals

B. H. Tagiev^a, O. V. Tagiev^ab, S. G. Asadullayeva<sup>a

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Lomonosov Moscow State University in Baku

Abstract: Current-voltage characteristics of the In–ZnGa$_2$Se$_4$–In structure have been studied in the temperature range of 90–335 K. Based on the data calculated for the concentration of three trap types in ZnGa$_2$Se$_4$, the values $N_t$ = 1.4 $\times$ 10$^{13}$, 8.2 $\times$ 10$^{12}$, and 2.6 $\times$ 10$^{12}$ cm$^{-3}$ are obtained. The contact region transparency $D^*_k$ = 10$^{-5}$, surface recombination velocity $S_k$ = 0.65 m/s, and carrier lifetime $\tau$ = 1.5 $\times$ 10$^{-4}$ s were determined. It was found that the current transmission mechanism in electric fields weaker than 10$^3$ V/cm is caused by monopolar carrier injection.

Received: 25.02.2010
Accepted: 29.04.2010

 English version: Semiconductors, 2011, 45:1, 52–55

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