Electronic properties of semiconductors

A thermally induced junction between impurity-conduction and intrinsic-conduction regions

M. M. Gadzhialiev, I. K. Kamilov, Z. Sh. Pirmagomedov

Daghestan Institute of Physics after Amirkhanov

Abstract: It is demonstrated that, by applying a high temperature gradient along a $p$-type germanium sample, it is possible to obtain a steady state where adjacent regions of impurity (hole) conduction and intrinsic conduction coexist to form a so-called thermally induced junction capable of current rectification. The “contact potential” of such a junction is calculated.

Received: 21.09.2009
Accepted: 19.06.2010

 English version: Semiconductors, 2011, 45:1, 47–48

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