This article is cited in 2 papers

Electronic properties of semiconductors

On the resonant donor level in $n$-CdTe according to data on electron transport under hydrostatic pressure

M. I. Daunov, A. S. Kovalev, A. Yu. Mollaev, A. B. Magomedov

Daghestan Institute of Physics after Amirkhanov

Abstract: Results of quantitative analysis of experimental data on baric (under the hydrostatic pressure to $P$ = 2.5 GPa and $T$ = 300 K) and temperature (in the temperature range of 15–300 K at atmospheric pressure) dependences of the Hall coefficient and electrical conductivity of bulk $n$-CdTe crystals with the electron concentration of 10$^{15}$–10$^{17}$ cm$^{-3}$ at $T$ = 300 K are presented. The four-level model is used and included deep donor levels arranged in the band gap and in the continuous spectrum of the conduction band and shallow donor and acceptor levels. The location of the donor levels and pressure coefficients of energy gaps between them and the edge of the conduction band are determined.

Received: 06.05.2010
Accepted: 02.07.2010

 English version: Semiconductors, 2011, 45:1, 43–46

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