This article is cited in 9 papers

Electronic properties of semiconductors

Features of the charge-transport mechanism in layered Bi$_2$Te$_3$ single crystals doped with chlorine and terbium

N. A. Abdullaev^a, N. M. Abdullaev^a, Kh. V. Aliguliyeva^a, T. G. Kerimova^a, G. S. Mehdiyev^a, S. A. Nemov<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b St. Petersburg Polytechnic University

Abstract: The temperature dependences ($T$ = 5–300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance ($H <$ 80 kOe, $T$ = 0.5–4.2 K) in Bi$_2$Te$_3$ single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi$_2$Te$_3$ with terbium atoms results in $p$-type conductivity and in increasing hole concentration. The doping of Bi$_2$Te$_3$ with chlorine atoms modifies also the character of its conductivity instead of changing only the type from $p$ to $n$. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi$_2$Te$_3$ single crystals doped with chlorine is proposed.

Received: 22.04.2010
Accepted: 17.05.2010

 English version: Semiconductors, 2011, 45:1, 37–42

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