This article is cited in 1 paper

Electronic properties of semiconductors

The influence of $\gamma$-ray radiation on electrical properties of CuGaSe$_2$

I. Kasumoglu, T. G. Kerimova, I. A. Mamedova

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The effect of $\gamma$-ray radiation on the conductivity of low-resistivity (10$^2$–10$^4$ $\Omega$ cm) and high-resistivity (10$^5$–10$^7$ $\Omega$ cm) CuGaSe$_2$ single crystals has been studied in the temperature range 77–330 K. It is found that the resistivity of low-resistivity samples increases as the dose of $\gamma$-ray radiation is increased, while the resistivity of high-resistivity samples is practically independent of the radiation dose. It is assumed that a decrease in the conductivity of the low-resistivity samples occurs owing to scattering of free charge carriers at defects (charged centers) formed as a result of irradiation with $\gamma$-ray photons. It is found that the dose of the $\gamma$-ray irradiation does not affect the temperature dependence of resistivity in the low- and high-resistivity samples in the temperature range 77–300 K.

Received: 30.03.2010
Accepted: 22.04.2010

 English version: Semiconductors, 2011, 45:1, 30–32

Bibliographic databases:

•