International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP

K. A. Gavrilov^a, V. V. Evstropov^a, N. A. Kalyuzhnyy^a, M. A. Mintairov^a, S. A. Mintairov^a, A. M. Nadtochiy^b, M. V. Nakhimovich^a, E. V. Pirogov^b, R. A. Salii^a, M. Z. Shvarts<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: InAsP and GaInAsP layers were grown on InP sub- strates using the metal-organic vapor-phase epitaxy method. The studies conducted using the photoluminescence, X-ray diffractometry, and energy-dispersive X-ray spectroscopy methods allowed us to determine the conditions for growing Ga$_{0.26}$In$_{0.74}$As$_{0.5}$P$_{0.5}$ layers with $\Delta a/a$ = 2000 ppm and a band gap of 1.04 eV (absorption edge 1190 nm). Based on these layers, a laser radiation photocon- verter structure for $\lambda$ = 1064 nm was grown. The measurements and calculations made it possible to predict the efficiency of such a structure at a level of 40% at a laser radiation incident power density of $\lambda$ = 1064 nm up to 30–50 W/cm$^2$.

Received: 30.04.2025
Revised: 08.09.2025
Accepted: 11.11.2025

DOI: 10.61011/FTP.2025.08.62185.7973