D. S. Papylev, I. I. Novikov, V. V. Andryushkin, A. G. Gladyshev, V. V. Dyudelev, L. Ya. Karachinsky, A. V. Babichev, I. A. Nyapshaev, A. Yu. Egorov, G. S. Sokolovskii, “Influence of the morphology of InP substrates on interface roughness and defect density of quantum-cascade laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 7,Pages <nobr>439

Semiconductor physics

Influence of the morphology of InP substrates on interface roughness and defect density of quantum-cascade laser heterostructures

D. S. Papylev^a, I. I. Novikov^ab, V. V. Andryushkin^ab, A. G. Gladyshev^b, V. V. Dyudelev^c, L. Ya. Karachinsky^ab, A. V. Babichev^a, I. A. Nyapshaev^c, A. Yu. Egorov^bc, G. S. Sokolovskii^c

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Connector Optics LLC, St. Petersburg
^c Ioffe Institute, St. Petersburg

Abstract: The influence of InP substrate of different manufactures on the structural properties of quantum-cascade laser heterostructures produced by molecular-beam epitaxy on metal-organic chemical vapor deposition templates was studied. A reduction in the root mean square interface roughness by 42–47% as well as a decrease in surface defect density by a factor of 1.5–4.0 were demonstrated by using one type of substrate despite equal nominal substrate characteristics. The results confirm the critical importance the initial substrate quality in reducing the density of point defects and the roughness of the interfaces of quantum cascade lasers heterostructures.

Received: 18.09.2025
Revised: 23.10.2025
Accepted: 05.11.2025

DOI: 10.61011/FTP.2025.07.62009.8580