Abstract:
The optimal conditions for growing AlGaInSbP/InP(100) heterostructures by liquid-phase gradient epitaxy are revealed: temperature of 823 K, temperature gradient of 20 K/cm, zone thickness of 200 $\mu$m and supercooling of 5 K. The composition Al$_x$Ga$_y$In$_{1-x-y}$Sb$_z$P$_{1-z}$ was established by mass spectroscopy: $x$ = 0.1, $y$ = 0.2, $z$ = 0.2 mol. fr. Using Raman spectroscopy, the presence of five modes of binary compounds has been proven: InSb, GaSb, InP, AlSb, GaP. The dependence of the structural perfection and photoluminescence on the presence of aluminum atoms (0.1 mol. fr.) in Ga$_{0.2}$In$_{0.8}$Sb$_{0.2}$P$_{0.8}$/InP heterostructures was studied. The spectral characteristics of the Al$_{0.2}$In$_{0.8}$P/Al$_{0.1}$Ga$_{0.2}$In$_{0.7}$Sb$_{0.2}$P$_{0.8}$/InP heterostructures showed a high quantum yield of about 95% in the wavelength range of $\lambda$ = 500–1100 nm.
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