XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Long-term decay of photoconductivity in $n$-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation

V. V. Vainberg^a, V. M. Vasetskii^a, Yu. N. Gudenko^a, V. N. Poroshin^a, N. V. Baidus^b, B. N. Zvonkov<sup>b

a</sup> Institute of Physics, National Academy of Sciences of Ukraine, Kiev
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The kinetics of photoconductivity in the $n$-In$_x$Ga$_{1-x}$As/GaAs heterostructures with double coupled quantum wells and $\delta$-doping in one of them has been investigated experimentally under the conditions of band-to-band excitation. It is shown that the long-term decay of photoconductivity observed in the range 10–70 K is caused by a chaotic potential formed by composition fluctuations in the quantum well layers.

Received: 15.04.2012
Accepted: 25.04.2012

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