Abstract:
Capacitance–voltage as well as capacitance–frequency and conductance–frequency characteristics for InGaN/GaN multiple-quantum-well light-emitting structures in frequence range of 60 Hz–5 MHz and temperature range of 77–300 K have been studied. It is shown that the process of charge relaxation in a quantum well is satisfactorily described by two mechanisms: thermoactivated one and that with a power dependence of the relaxation rate on the temperature. It is shown also that, in typical InGaN/GaN light-emitting structures, one or several quantum wells could be occupied by electrons at rather high values of the reverse bias. This allows to explain the observed earlier in such structures the depth shift of apparent carrier distribution profiles, obtained from capacitance–voltage characteristics, under lowering the temperature.
Fulltext:
PDF file (319 kB)