XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Heterostructures with GaAs/AlGaAs superlattices grown by MOCVD: growth features, optical and transport characteristics

N. V. Baidus^a, A. A. Biryukov^a, E. P. Dodin^b, Yu. N. Drozdov^b, M. N. Drozdov^b, Yu. N. Nozdrin^b, A. A. Andronov<sup>b

a</sup> Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The low pressure growth peculiarities of GaAs/ AlGaAs superlattices grown by MOCVD were studied. The superlattices were investigated by photoluminescence, capacitance profiling, X-ray diffraction and second-ion mass-spectrometry (SIMS) methods. Photoluminescence measurements show a high optical quality of the superlattices. X-ray diffraction and SIMS profiles show high period homogeneity of the superlattices grown under optimized conditions. Transport measurements on mesastructures with ohmic contacts show region of negative differential conductivity and current oscillations in the megahertz range, indicating the presence single miniband transport due to the Bragg reflections at moderate electric fields.

Received: 15.04.2012
Accepted: 25.04.2012

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