XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Dynamics of photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells

M. Ya. Vinnichenko^a, D. A. Firsov^a, L. E. Vorob'ev^a, M. O. Mashko^a, L. Shterengas^b, G. L. Belenky<sup>b

a</sup> St. Petersburg Polytechnic University
^b Department of Electrical and Computer Engineering, State University of New York at Stony Brook, 11794 New York, USA

Abstract: Dependences of photoluminescence intensity upon time were studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. From the analysis of photoluminescence dynamics we estimated the time of charge carrier capture in quantum wells, the energy relaxation times, lifetimes, including the lifetime related to resonant Auger recombination. It was shown that under certain design of nanostructures resonant Auger recombination can be observed.

Received: 15.04.2012
Accepted: 25.04.2012

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