This article is cited in 10 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

New system of self-assembled GaSb/GaP quantum dots

D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, T. S. Shamirzaev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.

Received: 25.04.2012
Accepted: 14.06.2012

 English version: Semiconductors, 2012, 46:12, 1534–1538

Bibliographic databases:

•