This article is cited in 1 paper

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures

S. V. Tikhov^a, N. V. Baidus^b, A. A. Biryukov^b, V. E. Degtyarov<sup>a

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The admittance of ring planar diode Au/InGaAs/InP and Au/InGaAs/InAlAs heteronanostructures on $i$-InP has been studied. The structures are constituted by a silicon $\delta$-doped layer and an InGaAs quantum well (QW) in InP or InAlAs epitaxial layers. An analysis of the capacitance-voltage and conductance-voltage characteristics yielded distribution profiles of the electron concentration and mobility in the vicinity of the QW and $\delta$-doped layer. It is shown that lowering the temperature leads to an increase in the electron concentration and mobility in the QW.

Received: 15.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:12, 1524–1528

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