This article is cited in 2 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Effect of He$^+$ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures

A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, N. S. Volkova

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The effect of He$^+$ ion implantation on the photosensitivity spectra of InGaAs/GaAs quantum well and InAs/GaAs quantum dot heterostructures grown by metalorganic chemical vapor deposition (MOCVD) epitaxy is studied.

Received: 15.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:12, 1506–1509

Bibliographic databases:

•