S. V. Tikhov, N. V. Baidus, A. A. Biryukov, S. V. Khazanova, “Determination of the electron concentration and mobility in the vicinity of a quantum well and <nobr>$\delta$</nobr>-doped layer in InGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 12,Pages <nobr>1532

This article is cited in 2 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures

S. V. Tikhov^a, N. V. Baidus^b, A. A. Biryukov^b, S. V. Khazanova^a

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Comparative admittance measurements in mesadiodes on an $n^+$-GaAs substrate and in ring planar diode structures on an $i$-GaAs substrate, which contain a Si $\delta$-doped layer and an InGaAs quantum well in the GaAs epitaxial layer are performed. The possibility of determining the concentration profile and electron mobility in the vicinity of the $\delta$-doped layer and the InGaAs quantum well is shown based on an analysis of the simultaneously measured capacitance-voltage and conductance-voltage characteristics of the mesadiodes. By performing such measurements for $i$-GaAs-based ring diode structures with the given geometry, it is possible to reliably determine only the concentration profile. The influence of the relative location of the quantum well and $\delta$-doped layer on the concentration profile and mobility is revealed. The phenomenon of Maxwell relaxation in $i$-GaAs-based ring diode structures is discussed.

Received: 15.04.2012
Accepted: 25.04.2012