This article is cited in 6 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles

P. A. Yunin, Yu. N. Drozdov, M. N. Drozdov, A. V. Novikov, D. V. Yurasov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: A method for solving the direct and inverse problems of depth profiling in secondary-ion mass spectrometry is suggested. The advantages of solving the incorrect inverse problem in Fourier space with regularization by the Tikhonov method are discussed. Upon the reconstruction of element-concentration profiles, special attention is given to their shift as a feature of the SIMS resolution function. Consideration of the shift is achieved by joint solution of the direct and inverse problems of depth profiling. Examples of the operation of the deconvolution algorithm for both simulated and experimental profiles are given. It is shown that use of the proposed deconvolution algorithm makes it possible to increase the informativity and improve the depth resolution of the method. The suggested method for taking into account the shift enables us to avoid regular error in determining the position of thin layers near the surface.

Received: 15.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:12, 1481–1486

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