P. V. Volkov, A. V. Goryunov, A. Yu. Luk'yanov, A. D. Tertyshnik, A. V. Novikov, D. V. Yurasov, N. A. Baidakova, N. N. Mikhailov, V. G. Remesnik, V. D. Kuz'min, “Optical monitoring of technological parameters during molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 12,Pages <nobr>1505

This article is cited in 18 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Optical monitoring of technological parameters during molecular-beam epitaxy

P. V. Volkov^a, A. V. Goryunov^a, A. Yu. Luk'yanov^a, A. D. Tertyshnik^a, A. V. Novikov^a, D. V. Yurasov^a, N. A. Baidakova^a, N. N. Mikhailov^b, V. G. Remesnik^b, V. D. Kuz'min^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: It is shown that one can use low-coherence tandem interferometry to measure the substrate temperature during the course of molecular-beam epitaxy in the case of oblique incidence of the probing light onto the surface. The temperature conditions in the Ob’-M installation for growing heteroepitaxial structures of cadmium and mercury tellurides and in the RIBER SIVA-21 installation for the growth of silicon-germanium structures are investigated. Calibration curves relating the readings of the standard thermocouple fixed within the heater to the true substrate temperature in the range 0–500$^\circ$C are created.

Received: 25.04.2012
Accepted: 25.04.2012