D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev, D. V. Shengurov, Z. F. Krasil'nik, N. D. Zakharov, P. Werner, “Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 11,Pages <nobr>1448

This article is cited in 5 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

D. N. Lobanov^a, A. V. Novikov^a, K. E. Kudryavtsev^a, M. V. Shaleev^a, D. V. Shengurov^a, Z. F. Krasil'nik^a, N. D. Zakharov^b, P. Werner^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale, Germany

Abstract: The results of investigation of the electroluminescence of multilayer $p$–$i$–$n$ structures with Ge(Si)/Si(001) self-assembled islands are presented. The nonmonotonic dependence of the room-temperature intensity of the electroluminescence signal from islands on the Si spacer thickness is revealed. The highest electroluminescence signal intensity is observed for structures with a Si spacer thickness of 15–20 nm. The significant decrease detected in the electroluminescence signal from the islands in structures with thick Si spacers ($>$ 20 nm) is explained by the formation of defect regions in them. The observed decrease in the electroluminescence signal in structures with thin Si layers is associated with a decrease in the Ge fraction in the islands in these structures, which is caused by enhanced Si diffusion into islands with increasing elastic strains in the structure.

Received: 25.04.2012
Accepted: 25.04.2012