This article is cited in 2 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry

Yu. N. Drozdov, M. N. Drozdov, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Calibration lines for the layer-by-layer analysis of the concentration of matrix elements in Al$_x$Ga$_{1-x}$As/GaAs layers are obtained using a TOF.SIMS-5 secondary-ion mass spectrometer. The alloy concentration for the set of test samples was independently measured by high-resolution X-ray diffractometry allowing for deviation of the lattice constants and elastic moduli from Vegard’s law. It is shown that when using Cs$^+$ sputtering ions and a Bi$^+$ beam in secondary-ion mass spectrometry, the dependence of the intensity ratio Y(CsAl$^+$)/Y(CsAs$^+$) on $x$(AlAs) is close to linear for positive ions; and when detecting negative ions, the dependence Y(Al$_2$As$^-$)/Y(As$^-$) on $x$ is close to linear. These data allow us to normalize the profiles of layer-by-layer analysis in the Al$_x$Ga$_{1-x}$As/GaAs system. In addition, a simple variant for the introduction of corrections to the deviation from Vegard’s law in the X-ray data is suggested.

Received: 25.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:11, 1392–1395

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