This article is cited in 13 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Features of impurity-photoconductivity relaxation in boron-doped silicon

V. V. Rumyantsev, S. V. Morozov, K. E. Kudryavtsev, V. I. Gavrilenko, D. V. Kozlov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: A series of studies of the impurity-photoconductivity relaxation in Si:B is carried out under pulse optical excitation by a narrow-band tunable radiation source in low and “heating” (10–500 V/cm) electric fields. It is shown that the dependence of the carrier-capture time in a band on the applied electric field is nonmonotonic and, in high fields ($>$75 V/cm), the capture time decreases with increasing field intensity, which is related to initiating the relaxation processes with optical-phonon emission within the band. The dependence of the relaxation rate for the carriers on the excitation-radiation wavelength is investigated, and a decrease in the carrier-capture time in the band is revealed in the vicinity of the Breit–Wigner–Fano resonances caused by direct capture at an impurity with optical-phonon emission.

Received: 25.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:11, 1387–1391

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