This article is cited in 2 papers

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-$\mu$m-range lasers

Yu. G. Sadof'ev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The DWELL (dots-in-a-well), DUWELL (dots-under-the-well), and GC-SRL (gradient-composition-strain-reducing-layer) concepts of InAs quantum dot epitaxial growth under identical conditions have been compared. The laser structures are designed for operation near 1.3 $\mu$m. An improved procedure is proposed for estimating the InAs growth rate. The dependence of the photoluminescence peak’s spectral position and intensity on the structure type and epitaxy conditions has been studied. A 10-stack DUWELL ridge waveguide laser diode with ground-state lasing at room temperature has been demonstrated.

Received: 25.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2012, 46:11, 1367–1371

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