This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Growth of 4H silicon carbide crystals on a $(11\bar22)$ seed

A. Yu. Fadeev^a, A. O. Lebedev^b, Yu. M. Tairov<sup>a

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Ioffe Institute, St. Petersburg

Abstract: The features of the defect structure of 4H silicon carbide ingots grown by the modified Lely method on $(11\bar22)$-oriented seeds are studied. It is shown that this seed plane can be used to improve the structural quality of silicon carbide ingots. The defect structure of grown ingots features a complete lack of micropores and a decreased (by an order of magnitude) dislocation density in comparison with the seed. At the same time, growth on the $(11\bar22)$ seed results in stacking fault accumulation. The type of stacking faults corresponds to formula (5, 2) in the Zhdanov notation (internal Frank stacking fault).

Received: 10.04.2012
Accepted: 16.04.2012

 English version: Semiconductors, 2012, 46:10, 1346–1350

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