This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

I. I. Izhnin^a, K. J. Mynbaev^b, M. V. Yakushev^c, A. I. Izhnin^a, E. I. Fitsych^d, N. L. Bazhenov^b, A. V. Shilyaev^b, G. V. Savitskii^a, R. Jakiela^e, A. V. Sorochkin^b, V. S. Varavin^b, S. A. Dvoretskii<sup>b

a</sup> Karat Scientific and Production Enterprise, L'vov
^b Ioffe Institute, St. Petersburg
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^d Ivan Franko National University of L'viv
^e Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Abstract: The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors $(\sim$5 $\times$ 10$^{14}$ cm$^{-3})$. Acceptor states supposedly related to the capture of impurities at structural defects typical of strongly lattice-mismatched heteroepitaxial structures are found in the films.

Received: 27.03.2012
Accepted: 02.04.2012

 English version: Semiconductors, 2012, 46:10, 1341–1345

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