V. V. Kabanov, E. V. Lebiadok, G. I. Ryabtsev, A. S. Smal, M. A. Shchemelev, D. A. Vinokurov, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10,Pages <nobr>1339

This article is cited in 7 papers

Semiconductor physics

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

V. V. Kabanov^a, E. V. Lebiadok^a, G. I. Ryabtsev^a, A. S. Smal^a, M. A. Shchemelev^a, D. A. Vinokurov^b, S. O. Slipchenko^b, Z. N. Sokolova^b, I. S. Tarasov^b

^a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Ioffe Institute, St. Petersburg

Abstract: Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.

Received: 28.03.2012
Accepted: 02.04.2012