Amorphous, glassy, organic semiconductors

Inversion of the impurity conductivity sign in As$_2$Se$_3$:Bi films deposited by two different methods

N. G. Almasov^a, O. Yu. Prikhodko^a, K. D. Tsendin<sup>b

a</sup> al-Farabi Kazakh National university, Almaty
^b Ioffe Institute, St. Petersburg

Abstract: It is demonstrated that As$_2$Se$_3$:Bi$_x$ films deposited by thermal evaporation have $p$-type impurity conductivity, whereas films of the same composition, produced by ion-plasma cosputtering in vacuum exhibit $n$-type impurity conductivity. On the basis of these results, a new method is suggested for the fabrication of $p$–$n$ homojunctions in film structures made of chalcogenide glassy semiconductors doped with bismuth in various ways.

Received: 27.03.2012
Accepted: 29.03.2012

 English version: Semiconductors, 2012, 46:10, 1296–1298

Bibliographic databases:

•